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	Microstructure and dielectric properties of Nd-doped bismuth titanate
	Yongyuan Zang ; Dan Xie ; Yehui Xiao ; Yong Ruan ; Tianling Ren ; Litian Liu
	2010-05-07 ; 2010-05-07
关键词	Experimental/ bismuth compounds coercive force dielectric polarisation dielectric thin films doping electrodes ferroelectricity grain size neodymium permittivity sol-gel processing/ microstructure property dielectric property neodymium-doped bismuth titanate thin films sol-gel process perovskite crystalline materials grain size platinum electrodes well-saturated polarization-voltage switching curves remnant polarization coercive field dielectric constant dissipation factor ferroelectrics temperature 750 C voltage 8 V B/sub 3.15/Nd/sub 0.85/Ti/sub 3/O/sub 12/ Pt Ti SiO/sub 2/ Si/ A7755 Dielectric thin films A7730 Dielectric polarization and depolarization effects A7780F Ferroelectric switching phenomena A6170T Doping and implantation of impurities A7720 Dielectric permittivity A6480G Microstructure A8115L Deposition from liquid phases (melts and solutions)/ temperature 1.02315E+03 K voltage 8.0E+00 V/ B3.15Nd0.85Ti3O12/ss Nd0.85/ss B3.15/ss O12/ss Ti3/ss Nd/ss Ti/ss B/ss O/ss Pt/sur Pt/el Ti/sur Ti/el SiO2/sur O2/sur Si/sur O/sur SiO2/bin O2/bin Si/bin O/bin Si/sur Si/el
中文摘要	B/sub 3.15/Nd/sub 0.85/Ti/sub 3/O/sub 12/ (BNdT) thin films were prepared on Pt(100)/Ti/SiO/sub 2//Si(100) substrate by sol-gel process. Perovskite crystalline was observed in the thin films achieved, and the grain size of the thin film was about 200 nm in diameter with sharp and clear boundaries between different films and the Pt electrodes. Well-saturated polarization-voltage (P-V) switching curves were examined in the BNdT thin films. The remnant polarization and the coercive field of the BNdT thin films annealed at 750 degrees C were 43 mu C/cm/sup 2/ and 66 kv/cm at an applied voltage of 8 v, respectively. The dielectric constant and the dissipation factor were 583 and 0.07 respectively, measured at 100 KHz.
语种	英语 ; 英语
出版者	Gordon and Breach Science Publishers ; Netherlands
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16545]
专题	清华大学
推荐引用方式 GB/T 7714	Yongyuan Zang,Dan Xie,Yehui Xiao,et al. Microstructure and dielectric properties of Nd-doped bismuth titanate[J],2010, 2010.
APA	Yongyuan Zang,Dan Xie,Yehui Xiao,Yong Ruan,Tianling Ren,&Litian Liu.(2010).Microstructure and dielectric properties of Nd-doped bismuth titanate..
MLA	Yongyuan Zang,et al."Microstructure and dielectric properties of Nd-doped bismuth titanate".(2010).

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