| Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors | |
| Liu Xing-Ming ; Han Lin ; Liu Li-tian | |
| 2010-05-07 ; 2010-05-07 | |
| 关键词 | structure optimization uncooled a-Si TFT infrared sensors detectivity thermal design SI Instruments & Instrumentation Optics Physics, Applied |
| 中文摘要 | The influence of gate dimensions on the detectivity of uncooled amorphous silicon thin film transistor infrared sensors is analyzed theoretically. The relationship between the structure parameter of thin film transistor and electronic as well as thermal responsivity is simulated by finite element analysis software. Optimized structure has been carried out through theoretical analysis and ANSYS 8.0 simulation. (c) 2006 Elsevier B.V. All rights reserved. |
| 语种 | 英语 ; 英语 |
| 出版者 | ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/16543]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Liu Xing-Ming,Han Lin,Liu Li-tian. Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors[J],2010, 2010. |
| APA | Liu Xing-Ming,Han Lin,&Liu Li-tian.(2010).Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors.. |
| MLA | Liu Xing-Ming,et al."Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors".(2010). |
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