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	Numerical simulation of Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diode at room temperature
	Li Tao ; Yu Zhiping ; Wang Yan ; Huang Lei ; Xiang Cailan
	2010-05-07 ; 2010-05-07
关键词	Practical Theoretical or Mathematical/ effective mass electrical resistivity elemental semiconductors Ge-Si alloys resonant tunnelling diodes semiconductor device models silicon/ numerical simulation resonant tunneling diode room temperature I-V curves RTD quantum hydrodynamic model integrated difference scheme Schafetter-Gummel method second-order central difference method structural modifications quantum barrier thickness hole effective mass simulated peak-to-valley current ratio negative differential resistance 1.14 to 298 K Si-Si/sub 1-x/Ge/sub x// B2560H Junction and barrier diodes B2560B Semiconductor device modelling and equivalent circuits/ temperature 1.14E+00 to 2.98E+02 K/ Si-SiGe/int SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin Si/el
中文摘要	I-V curves of a 35 nm p-type Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diode (RTD) are simulated with the quantum hydrodynamic (QHD) model. An integrated difference scheme including the Schafetter-Gummel method, second upwind method, and second-order central difference method is used to discretize the QHD equations, maintaining both accuracy and stability. Investigations of some structural modifications are also carried out. The analytical results indicate that both quantum barrier thickness and hole effective mass affect the NDR characteristics of Si/Si/sub 1-x/Ge/sub x/, RTDs. The simulated peak-to-valley current ratio of 1.14 at 293 K agrees with the experimental result when x = 0.23.
语种	中文 ; 中文
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16520]
专题	清华大学
推荐引用方式 GB/T 7714	Li Tao,Yu Zhiping,Wang Yan,et al. Numerical simulation of Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diode at room temperature[J],2010, 2010.
APA	Li Tao,Yu Zhiping,Wang Yan,Huang Lei,&Xiang Cailan.(2010).Numerical simulation of Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diode at room temperature..
MLA	Li Tao,et al."Numerical simulation of Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diode at room temperature".(2010).

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