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	A low noise darlington SiGe microwave monolithic integrated circuit
	Lu Ya-shi ; Zhang Wei ; Li Gao-qing ; Liu Dao-guang ; Li Xi-you ; Lu Yong ; Liu Ai-hua ; Zhang Xiang
	2010-05-07 ; 2010-05-07
关键词	Practical/ bipolar MMIC Ge-Si alloys heterojunction bipolar transistors resistors/ low noise microwave monolithic integrated circuit Darlington configuration heterojunction bipolar transistors HBT resistors quasi-self-aligned process epitaxial base cutoff frequency noise figure VSWR 1 GHz 9.2 GHz 10.9 GHz 14.3 dB 1.59 dB SiGe/ B1350H Microwave integrated circuits B2570B Bipolar integrated circuits/ frequency 1.0E+09 Hz frequency 9.2E+09 Hz frequency 1.09E+10 Hz gain 1.43E+01 dB noise figure 1.59E+00 dB/ SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin
中文摘要	A low noise microwave monolithic integrated circuit (MMIC) using Darlington configuration SiGe heterojunction bipolar transistors (HBT's) is presented. The circuit consists of two SiGe HBTs and four resistors. It is fabricated in a quasi-self-aligned process, with a non-selectively grown epitaxial SiGe base. The cutoff frequency of HBTs is 10.9 GHz and 9.2 GHz, respectively. The MMIC is measured to have a noise figure of 1.59 dB, a power gain of 14.3 dB, and an input and output VSWR of 1.6 and 2.0 at 1 GHz.
语种	中文 ; 中文
出版者	Editorial Dept. Microelectronics ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16517]
专题	清华大学
推荐引用方式 GB/T 7714	Lu Ya-shi,Zhang Wei,Li Gao-qing,et al. A low noise darlington SiGe microwave monolithic integrated circuit[J],2010, 2010.
APA	Lu Ya-shi.,Zhang Wei.,Li Gao-qing.,Liu Dao-guang.,Li Xi-you.,...&Zhang Xiang.(2010).A low noise darlington SiGe microwave monolithic integrated circuit..
MLA	Lu Ya-shi,et al."A low noise darlington SiGe microwave monolithic integrated circuit".(2010).

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