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	Gate-capacitance-shift approach and compact modeling for quantum mechanical effects in poly-gates
	Zhang Dawei ; Zhang Hao ; Tian Lilin ; Yu Zhiping
	2010-05-07 ; 2010-05-07
关键词	Practical Theoretical or Mathematical/ capacitance elemental semiconductors MOSFET nanostructured materials semiconductor device models silicon/ gate-capacitance-shift approach compact modeling quantum mechanical effects polysilicon polygates density gradient model nanoscale MOSFET polydepletion Si/ B2560B Semiconductor device modelling and equivalent circuits B2560R Insulated gate field effect transistors/ Si/int Si/el
中文摘要	A new approach, gate-capacitance-shift (GCS) approach, is described for compact modeling. This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime. Additionally, an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model. It is then combined with the GCS approach to develop a compact model for these effects. The model results tally well with numerical simulation. Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are nonnegligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.
语种	英语 ; 英语
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16512]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang Dawei,Zhang Hao,Tian Lilin,et al. Gate-capacitance-shift approach and compact modeling for quantum mechanical effects in poly-gates[J],2010, 2010.
APA	Zhang Dawei,Zhang Hao,Tian Lilin,&Yu Zhiping.(2010).Gate-capacitance-shift approach and compact modeling for quantum mechanical effects in poly-gates..
MLA	Zhang Dawei,et al."Gate-capacitance-shift approach and compact modeling for quantum mechanical effects in poly-gates".(2010).

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