Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory | |
Lei Sun ; Liyang Pan ; Huiqing Pang ; Ying Zhng ; Zhaojian Zhang ; John Chen ; Jun Zhu | |
2010-05-07 ; 2010-05-07 | |
关键词 | Practical Experimental/ charge injection electron traps hole traps hot carriers semiconductor storage tunnelling/ band-band tunneling hot hole injection BBHH erasing operation charge-trapping memory charge-pumping charge distribution electron distribution hole distribution channel hot electron channel-initialed secondary electron CHISEL programming devices erasing speed CHE-programmed devices drain voltage SONOS memory/ B1265D Memory circuits C5320G Semiconductor storage |
中文摘要 | In this paper, we present a combined charge-pumping measurement method for charge distribution profiling in charge-trapping memory. Electron and hole distributions after channel hot electron (CHE) or channel-initialed secondary electron (CHISEL) programming and band-to-band tunneling hot hole (BBHH) erasing are accurately determined. It is shown that BBHH-induced hot holes distribute in a narrow region near the drain junction, and cannot neutralize all the electrons particularly in CHISEL-programmed devices. The influence of the BBHH erasing condition on the width of hole distribution is demonstrated, and the effects on the characteristics of erasing speed and P/E cycling endurance are investigated and analyzed. It is shown that in the CHE-programmed devices, the erasing speed can be enhanced and endurance characteristics can be improved if a high drain voltage is used during erasing operation. |
语种 | 英语 ; 英语 |
出版者 | Japan Soc. Appl. Phys ; Japan |
内容类型 | 期刊论文 |
源URL | [http://hdl.handle.net/123456789/16490] ![]() |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | Lei Sun,Liyang Pan,Huiqing Pang,et al. Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory[J],2010, 2010. |
APA | Lei Sun.,Liyang Pan.,Huiqing Pang.,Ying Zhng.,Zhaojian Zhang.,...&Jun Zhu.(2010).Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory.. |
MLA | Lei Sun,et al."Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory".(2010). |
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