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	Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory
	Lei Sun ; Liyang Pan ; Huiqing Pang ; Ying Zhng ; Zhaojian Zhang ; John Chen ; Jun Zhu
	2010-05-07 ; 2010-05-07
关键词	Practical Experimental/ charge injection electron traps hole traps hot carriers semiconductor storage tunnelling/ band-band tunneling hot hole injection BBHH erasing operation charge-trapping memory charge-pumping charge distribution electron distribution hole distribution channel hot electron channel-initialed secondary electron CHISEL programming devices erasing speed CHE-programmed devices drain voltage SONOS memory/ B1265D Memory circuits C5320G Semiconductor storage
中文摘要	In this paper, we present a combined charge-pumping measurement method for charge distribution profiling in charge-trapping memory. Electron and hole distributions after channel hot electron (CHE) or channel-initialed secondary electron (CHISEL) programming and band-to-band tunneling hot hole (BBHH) erasing are accurately determined. It is shown that BBHH-induced hot holes distribute in a narrow region near the drain junction, and cannot neutralize all the electrons particularly in CHISEL-programmed devices. The influence of the BBHH erasing condition on the width of hole distribution is demonstrated, and the effects on the characteristics of erasing speed and P/E cycling endurance are investigated and analyzed. It is shown that in the CHE-programmed devices, the erasing speed can be enhanced and endurance characteristics can be improved if a high drain voltage is used during erasing operation.
语种	英语 ; 英语
出版者	Japan Soc. Appl. Phys ; Japan
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16490]
专题	清华大学
推荐引用方式 GB/T 7714	Lei Sun,Liyang Pan,Huiqing Pang,et al. Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory[J],2010, 2010.
APA	Lei Sun.,Liyang Pan.,Huiqing Pang.,Ying Zhng.,Zhaojian Zhang.,...&Jun Zhu.(2010).Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory..
MLA	Lei Sun,et al."Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory".(2010).

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