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	Deep submicron simulation power optimizing model
	Su Yajuan ; Wei Shaojun
	2010-05-07 ; 2010-05-07
关键词	Theoretical or Mathematical Experimental/ circuit complexity circuit optimisation power consumption/ deep submicron simulation power optimizing model DVS ABB supply voltage body bias voltage power consumption operational frequency domain switch capacitances circuits process technology SEM power evaluating method computing complexity/ B1130 General circuit analysis and synthesis methods B0260 Optimisation techniques
中文摘要	Combining DVS and ABB technique, scaling supply voltage V/sub dd / and body bias voltage V/sub bs/ simultaneously is an effect method of reducing power consumption. Based on the analytic method, a simplified power optimizing model is presented. Separating the operational frequency domain into three areas, one of the optimal V/sub dd/ and V/sub ds/ value corresponding to a given frequency in each area is kept constant, thus the complicated computing procedure of solving the exceeding equation is avoided. Furthermore a power evaluating method named SEM for obtaining simplified model for application with different switch capacitances is proposed. The simulated result performed on circuits fabricated by 0.18 mu m and 0.07 mu m process technology verifies that the optimal power of employing simplified model and SEM method are very close and the maximum error between them are 2% and 5% respectively and the average error are 0.8% and 1% respectively. The results prove that the optimizing power model and SEM power evaluating method can reduce the computing complexity without sacrificing the accuracy.
语种	英语 ; 英语
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16451]
专题	清华大学
推荐引用方式 GB/T 7714	Su Yajuan,Wei Shaojun. Deep submicron simulation power optimizing model[J],2010, 2010.
APA	Su Yajuan,&Wei Shaojun.(2010).Deep submicron simulation power optimizing model..
MLA	Su Yajuan,et al."Deep submicron simulation power optimizing model".(2010).

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