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	Freestanding a-Si thin film transistor for room-temperature infrared detection
	Dong Liang ; Yue Rui-Feng ; Liu Li-Tian ; Zhang Wan-Jie
	2010-05-07 ; 2010-05-07
关键词	Practical/ amorphous semiconductors elemental semiconductors infrared detectors infrared imaging micromachining microsensors semiconductor device noise silicon thin film transistors/ room-temperature infrared imaging uncooled infrared sensor freestanding amorphous thin film transistor drain current temperature coefficient porous silicon micromachining detector fabrication thermally isolated air bridges thermal capacitance thermal conductance performance figures responsivity noise voltage infrared detectivity chopping frequency Si/ A0762 Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection) A0720 Thermal instruments and techniques A4280Q Image detectors, convertors, and intensifiers A0710C Micromechanical devices and systems B7230G Image sensors B2560R Insulated gate field effect transistors B7230C Photodetectors B2575F Fabrication of micromechanical devices B7230M Microsensors/ Si/int Si/el
中文摘要	We present the fabrication and characterization of a novel uncooled infrared sensor for room-temperature infrared imaging. The sensitive element of the sensor is a freestanding amorphous silicon thin film transistor (a-Si TFT) with the temperature coefficient of the drain current (TCC) of 0.015-0.08/K. The TCC value is sensitive to the ambient temperature and can be controlled by the gate voltage of the a-Si TFT. The complete procedures based on the porous silicon micromachining technique for fabricating thermally isolated air bridges are described. The isolation structures have a thermal conductance of 5*10/sup -6 / W/K and a thermal capacitance of 4.9*10/sup -8/ J/K. The effects of the gate voltage on the performance figures such as responsivity, noise voltage and detectivity are described and analysed in detail. The maximum detectivity reaches 4.33*10/sup 8/ cmHz/sup 1/2/W/sup -1/ at a chopping frequency of 27 Hz and a gate voltage of -15 V.
语种	英语 ; 英语
出版者	Chinese Phys. Soc ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16448]
专题	清华大学
推荐引用方式 GB/T 7714	Dong Liang,Yue Rui-Feng,Liu Li-Tian,et al. Freestanding a-Si thin film transistor for room-temperature infrared detection[J],2010, 2010.
APA	Dong Liang,Yue Rui-Feng,Liu Li-Tian,&Zhang Wan-Jie.(2010).Freestanding a-Si thin film transistor for room-temperature infrared detection..
MLA	Dong Liang,et al."Freestanding a-Si thin film transistor for room-temperature infrared detection".(2010).

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