| Self-localization of holes in a lightly doped Mott insulator | |
| Kou, SP ; Weng, ZY | |
| 2010-05-06 ; 2010-05-06 | |
| 关键词 | T-J MODEL THERMOELECTRIC-POWER DIELECTRIC-CONSTANT METAL TRANSITION GAUGE FIELD CONDUCTIVITY ANTIFERROMAGNET DEPENDENCE LA2CUO4+Y TRANSPORT Physics, Condensed Matter |
| 中文摘要 | We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperature, resulting in spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T-c cuprates. Disorder and impurities only play a minor and assistant role here. |
| 语种 | 英语 ; 英语 |
| 出版者 | SPRINGER ; NEW YORK ; 233 SPRING STREET, NEW YORK, NY 10013 USA |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/14576]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Kou, SP,Weng, ZY. Self-localization of holes in a lightly doped Mott insulator[J],2010, 2010. |
| APA | Kou, SP,&Weng, ZY.(2010).Self-localization of holes in a lightly doped Mott insulator.. |
| MLA | Kou, SP,et al."Self-localization of holes in a lightly doped Mott insulator".(2010). |
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