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	Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric
	Wang, Wei ; Dong, Guifang ; Wang, Liduo ; Qiu, Yong
	2010-05-06 ; 2010-05-06
关键词	pentacene (Ba,Sr)TiO3 gate dielectric sol-gel routes optical transmittance organic thin film transistors NIOX ELECTRODES LOW-VOLTAGE INSULATORS CHANNEL Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied
中文摘要	An amorphous Ba0.6Sr0.4TiO3 (BST) film with the thickness of 200 nm was deposited on indium-tin-oxide (ITO)-coated glass substrate through sol-gel route and post-annealing at 500 degrees C. The dielectric constant of the BST film was determined to be 20.6 at 100 kHz by measuring the Ag/BST/ITO parallel plate capacitor, and no dielectric tunability was observed with the bias voltage varying from -5 to 5 V. The BST film shows a dense and uniform microstructure as well as a smooth surface with the root-mean-square (RMS) roughness of about 1.4 nm. The leakage current density was found to be 3.5 x 10(-8) A/cm(2) at an applied voltage of -5 V. The transmittance of the BST/ITO/glass structure is more than 70% in the visible region. Pentacene based transistor using the as-prepared BST film as gate insulator exhibits a low threshold voltage of -1.3 V, the saturation field-effect mobility of 0.68 cm(2)/VS, and the current on/off ratio of 3.6 x 10(5). The results indicate that the sot-gel derived BST film is a promising high-k gate dielectric for large-area transparent organic transistor arrays on glass substrate. (c) 2007 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/13688]
专题	清华大学
推荐引用方式 GB/T 7714	Wang, Wei,Dong, Guifang,Wang, Liduo,et al. Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric[J],2010, 2010.
APA	Wang, Wei,Dong, Guifang,Wang, Liduo,&Qiu, Yong.(2010).Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric..
MLA	Wang, Wei,et al."Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric".(2010).

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