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	Preparation and photoelectrochemical properties of Bi/sub 2/MoO/sub 6/ films
	Man Yi ; Zong Rui-Long ; Zhu Yong-Fa
	2010-05-06 ; 2010-05-06
关键词	Experimental/ bismuth compounds calcination current density dip coating liquid phase deposited coatings nanoparticles particle size photoconductivity photoelectrochemistry Raman spectra reflectivity scanning electron microscopy surface morphology X-ray diffraction/ photoelectrochemical property ITO glass substrate dip coating surface structure film morphology scanning electron microscope SEM X-ray diffraction XRD laser Raman spectroscopy LSR diffuse reflectance spectroscopy DRS photocurrent action curves incident photon-to-current conversion efficiency IPCE gamma -Bi/sub 2/MoO/sub 6/ phase nanoparticle size film thickness calcination visible-light response photocurrent density amorphous complex precursor temperature 500 degC temperature 525 degC time 1 h wavelength 400 nm Bi/sub 2/MoO/sub 6/ ITO-SiO/sub 2// A8115L Deposition from liquid phases (melts and solutions) A8140G Other heat and thermomechanical treatments A6146 Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials A7240 Photoconduction and photovoltaic effects photodielectric effects A7360 Electrical properties of thin films and low-dimensional structures A7830G Infrared and Raman spectra in inorganic crystals A7865P Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures) A6820 Solid surface structure A8250 Photochemistry and radiation chemistry A8245 Electrochemistry and electrophoresis A6855 Thin film growth, structure, and epitaxy/ temperature 7.7315E+02 K temperature 7.9815E+02 K time 3.6E+03 s wavelength 4.0E-07 m/ Bi2MoO6/ss Bi2/ss O6/ss Bi/ss Mo/ss O/ss InSnOSiO2/sur SiO2/sur O2/sur In/sur Si/sur Sn/sur O/sur InSnOSiO2/ss SiO2/ss O2/ss In/ss Si/ss Sn/ss O/ss
中文摘要	Bi/sub 2/MoO/sub 6/ films on ITO glass substrates were prepared from amorphous complex precursor by dip-coating technique. The relationships between conditions of preparation, structures, morphologies and photoelectrochemical properties of Bi/sub 2/MoO/sub 6/ films were investigated by using scanning electron microscope (SEM), X-ray diffraction (XRD), laser Raman spectroscopy (LRS), diffuse reflectance spectroscopy (DRS), photocurrent action curves, and incident photon-to-current conversion efficiency (IPCE). Bi/sub 2/MoO/sub 6/ films prepared at 500 degrees C for 1 h were gamma -Bi/sub 2/MoO/sub 6/ phase, and Bi/sub 2/MoO/sub 6/ nanoparticles grew along (131) plane. The thickness of the films obtained was about 69 nm. The size of the Bi/sub 2/MoO/sub 6/ nanoparticles was increased with rising calcination temperature and extention of calcination time, in addition gamma -Bi/sub 2/MoO/sub 6/ changed into beta -Bi/sub 2/MoO/sub 6/ and gamma '-Bi/sub 2/MoO/sub 6/ at 525 degrees C. Bi/sub 2/MoO/sub 6/ films had visible-light response, and detectable photocurrent was generated under the visible-light ( gamma >400 nm) irradiation. The IPCE of the optimized Bi/sub 2/MoO/sub 6/ films was 2.14% at 400 nm. The photocurrent density and IPCE could be controlled by modifying the surface structure of Bi/sub 2/MoO/sub 6/ films, which could be achieved by changing the preparation conditions.
语种	中文 ; 中文
出版者	Editorial Board of Acta Physico-Chimica Sinica ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/12555]
专题	清华大学
推荐引用方式 GB/T 7714	Man Yi,Zong Rui-Long,Zhu Yong-Fa. Preparation and photoelectrochemical properties of Bi/sub 2/MoO/sub 6/ films[J],2010, 2010.
APA	Man Yi,Zong Rui-Long,&Zhu Yong-Fa.(2010).Preparation and photoelectrochemical properties of Bi/sub 2/MoO/sub 6/ films..
MLA	Man Yi,et al."Preparation and photoelectrochemical properties of Bi/sub 2/MoO/sub 6/ films".(2010).

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