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Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices
Xiong, B ; Wang, J ; Cai, PF ; Tian, JB ; Sun, CZ ; Luo, Y
2010-05-06 ; 2010-05-06
关键词wideband Si-based submount high-resistivity Si substrate low-loss coplanar waveguide thin-film resistor 40-Gb/s EA modulator INDUCTORS Engineering, Electrical & Electronic Optics
中文摘要A novel low-cost wideband Si-based submount is proposed and fabricated for 40-Gb/s optoelectronic devices. The submount contains a coplanar waveguide (CPW) for microwave-signal feeding and a TaN thin-film resistor for impedance matching. The CPW transmission line is directly formed on high-resistivity Si substrate and exhibits a transmission loss as low as 0.165 dB/mm up to 40 GHz. Such a configuration has the advantage of a simplified fabrication procedure and efficient heat dissipation. As a demonstration, a high-speed electroabsorption (EA) modulator is chip-level packaged using the Si-based submount. The small-signal modulation bandwidth is measured to be more than 33 GHz, which is the first report of 40-Gb/s optoelectronic devices on Si-based submount. (c) 2005 Wiley Periodicals, Inc.
语种英语 ; 英语
出版者JOHN WILEY & SONS INC ; HOBOKEN ; 111 RIVER ST, HOBOKEN, NJ 07030 USA
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/11546]  
专题清华大学
推荐引用方式
GB/T 7714
Xiong, B,Wang, J,Cai, PF,et al. Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices[J],2010, 2010.
APA Xiong, B,Wang, J,Cai, PF,Tian, JB,Sun, CZ,&Luo, Y.(2010).Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices..
MLA Xiong, B,et al."Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices".(2010).
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