| Deep InP gratings for opto-electronic devices etched by Cl-2/CH4/Ar inductively coupled plasma | |
| Wang, Jian ; Tian, Jian-Bai ; Xiong, B. ; Sun, C. Z. ; Hao, Z. B. ; Luo, Y. | |
| 2010-05-06 ; 2010-05-06 | |
| 关键词 | COMPOUND SEMICONDUCTORS SMOOTH INGAAS LASER Physics, Multidisciplinary |
| 中文摘要 | Deep INP gratings are etched by Cl-2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF0 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl-2/CH4/Ar ICP are optimized for high antistropy, and a 1.7-mu m-deep INP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-mu m laterally coupled distributed feedback AlGaInAs-InP laser. |
| 语种 | 英语 ; 英语 |
| 出版者 | IOP PUBLISHING LTD ; BRISTOL ; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/11534]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Wang, Jian,Tian, Jian-Bai,Xiong, B.,et al. Deep InP gratings for opto-electronic devices etched by Cl-2/CH4/Ar inductively coupled plasma[J],2010, 2010. |
| APA | Wang, Jian,Tian, Jian-Bai,Xiong, B.,Sun, C. Z.,Hao, Z. B.,&Luo, Y..(2010).Deep InP gratings for opto-electronic devices etched by Cl-2/CH4/Ar inductively coupled plasma.. |
| MLA | Wang, Jian,et al."Deep InP gratings for opto-electronic devices etched by Cl-2/CH4/Ar inductively coupled plasma".(2010). |
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