Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma | |
Wang Jian ; Tian Jian-Bai ; Xiong Bing ; Sun Chang-Zheng ; Hao Zhi-Biao ; Luo Yi | |
2010-05-06 ; 2010-05-06 | |
关键词 | Practical Experimental/ aluminium compounds etching gallium arsenide III-V semiconductors indium compounds plasma materials processing semiconductor lasers/ deep InP gratings SiN/sub x/ mask patterns wet etching dry etching SF/sub 6/ reactive ion etching laterally coupled distributed feedback AlGaInAs-InP laser opto-electronic devices Cl/sub 2//CH/sub 4//Ar inductively coupled plasma 293 to 298 K AlGaInAs-InP/ A8160C Surface treatment and degradation in semiconductor technology A5275R Plasma applications in manufacturing and materials processing A4260B Design of specific laser systems B2550E Surface treatment (semiconductor technology) B0170G General fabrication techniques B4320J Semiconductor lasers/ temperature 2.93E+02 to 2.98E+02 K/ AlGaInAs-InP/int AlGaInAs/int InP/int Al/int As/int Ga/int In/int P/int AlGaInAs/ss Al/ss As/ss Ga/ss In/ss InP/bin In/bin P/bin |
中文摘要 | Deep InP gratings are etched by Cl/sub 2//CH/sub 4//Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiN/sub x/ mask patterns formed by wet and dry etching. SF/sub 6/ reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl/sub 2//CH/sub 4 //Ar ICP are optimized for high anisotropy, and a 1.7- mu m-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55- mu m laterally coupled distributed feedback AlGaInAs-InP laser. |
语种 | 英语 ; 英语 |
出版者 | Chinese Phys. Soc ; China |
内容类型 | 期刊论文 |
源URL | [http://hdl.handle.net/123456789/11297] ![]() |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | Wang Jian,Tian Jian-Bai,Xiong Bing,et al. Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma[J],2010, 2010. |
APA | Wang Jian,Tian Jian-Bai,Xiong Bing,Sun Chang-Zheng,Hao Zhi-Biao,&Luo Yi.(2010).Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma.. |
MLA | Wang Jian,et al."Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma".(2010). |
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