QQ客服 官方微博 反馈留言

	Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma
	Wang Jian ; Tian Jian-Bai ; Xiong Bing ; Sun Chang-Zheng ; Hao Zhi-Biao ; Luo Yi
	2010-05-06 ; 2010-05-06
关键词	Practical Experimental/ aluminium compounds etching gallium arsenide III-V semiconductors indium compounds plasma materials processing semiconductor lasers/ deep InP gratings SiN/sub x/ mask patterns wet etching dry etching SF/sub 6/ reactive ion etching laterally coupled distributed feedback AlGaInAs-InP laser opto-electronic devices Cl/sub 2//CH/sub 4//Ar inductively coupled plasma 293 to 298 K AlGaInAs-InP/ A8160C Surface treatment and degradation in semiconductor technology A5275R Plasma applications in manufacturing and materials processing A4260B Design of specific laser systems B2550E Surface treatment (semiconductor technology) B0170G General fabrication techniques B4320J Semiconductor lasers/ temperature 2.93E+02 to 2.98E+02 K/ AlGaInAs-InP/int AlGaInAs/int InP/int Al/int As/int Ga/int In/int P/int AlGaInAs/ss Al/ss As/ss Ga/ss In/ss InP/bin In/bin P/bin
中文摘要	Deep InP gratings are etched by Cl/sub 2//CH/sub 4//Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiN/sub x/ mask patterns formed by wet and dry etching. SF/sub 6/ reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl/sub 2//CH/sub 4 //Ar ICP are optimized for high anisotropy, and a 1.7- mu m-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55- mu m laterally coupled distributed feedback AlGaInAs-InP laser.
语种	英语 ; 英语
出版者	Chinese Phys. Soc ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/11297]
专题	清华大学
推荐引用方式 GB/T 7714	Wang Jian,Tian Jian-Bai,Xiong Bing,et al. Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma[J],2010, 2010.
APA	Wang Jian,Tian Jian-Bai,Xiong Bing,Sun Chang-Zheng,Hao Zhi-Biao,&Luo Yi.(2010).Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma..
MLA	Wang Jian,et al."Deep InP gratings for opto-electronic devices etched by Cl/sub 2 //CH/sub 4//Ar inductively coupled plasma".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。