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Experimental study on pulse neutron and gamma ray irradiation effects on SiGe HBT
Liu Shuhuan ; Lin Dongsheng ; Guo Xiaoqiang ; Liu Hongbing ; Jiang Xinbiao ; Zhu Guangning ; Li Da ; Wang Zujun ; Chen Wei ; Zhang Wei ; Zhou Hui ; Shao Beibei ; Li Junli
2010-05-06 ; 2010-05-06
关键词Practical Experimental/ electric breakdown gamma-ray effects Ge-Si alloys heterojunction bipolar transistors leakage currents neutron effects semiconductor materials/ pulse neutron irradiation effects gamma ray irradiation effects SiGe HBT DC common emitter static current gain base current junction leakage current collector current breakdown voltage 256.85 Gy SiGe/ B2560J Bipolar transistors B2550R Radiation effects on semiconductor devices/ radiation absorbed dose 2.5685E+02 Gy/ SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin
中文摘要Changes in the typical electronic parameters of SiGe HBTs irradiated by pulse neutron and gamma rays from a reactor are measured. The DC common emitter static current gain of the SiGe HBTs only decreases by about 20% after being irradiated with 1 * 10/sup 13 / cm/sup -2/ neutron fluence and 256.85 Gy(Si) gamma total dose. The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation. After irradiation, the cutoff frequency f/sub T/ is nearly unchanged, but the maximum oscillation frequency f/sub max / decreases a little. The mechanisms of the reactor pulse neutron and gamma rays irradiation damage for SiGe HBTs are preliminarily analyzed.
语种中文 ; 中文
出版者Science Press ; China
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/10856]  
专题清华大学
推荐引用方式
GB/T 7714
Liu Shuhuan,Lin Dongsheng,Guo Xiaoqiang,et al. Experimental study on pulse neutron and gamma ray irradiation effects on SiGe HBT[J],2010, 2010.
APA Liu Shuhuan.,Lin Dongsheng.,Guo Xiaoqiang.,Liu Hongbing.,Jiang Xinbiao.,...&Li Junli.(2010).Experimental study on pulse neutron and gamma ray irradiation effects on SiGe HBT..
MLA Liu Shuhuan,et al."Experimental study on pulse neutron and gamma ray irradiation effects on SiGe HBT".(2010).
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