A 10 Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme. Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser, while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance. The integrated device exhibits a threshold current as low as 12 mA and an extinction ratio over 15 dB at -2 V bias. The small signal modulation bandwidth is measured to be over 10 GHz. The transmission experiment at 10 Gb/s indicates a power penalty less than 1 dB at a bit-error-rate of 10/sup -12/ after transmission through 35 km single mode fiber.
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