| Novel planar electrode structure for high-speed (> 40 GHz) electroabsorption modulators | |
| Wang, Jian ; Xiong, Bing ; Cai, Peng-Fei ; Tian, Jian-Bo ; Sun, Chang-Zheng ; Luo, Yi | |
| 2010-05-06 ; 2010-05-06 | |
| 关键词 | electroabsorption modulators inductively coupled plasma dry etching Physics, Applied |
| 中文摘要 | A novel planar electrode structure has been developed for the fabrication of high-speed electroabsorption (EA) modulators. To reduce the modulator capacitance, a narrow high-mesa waveguide is fabricated by inductively coupled plasma (ICP) dry etching technique. A planarized electrode is then formed by inserting a thick SiO2 insulation mesa beneath the bonding pad, and photo-sensitive polymer is adopted to fill the trench between the ridge and the SiO2 mesa. The planarization procedure is carried out in a self-aligned way. The capacitance of fabricated EA modulators is estimated to be 0.12pF, and a modulation bandwidth over 40 GHz has been demonstrated. |
| 语种 | 英语 ; 英语 |
| 出版者 | INST PURE APPLIED PHYSICS ; TOKYO ; 5F YUSHIMA BLDG, 2-31-22 YUSHIMA, BUNKYO-KU, TOKYO, 113-0034, JAPAN |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/10759]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Wang, Jian,Xiong, Bing,Cai, Peng-Fei,et al. Novel planar electrode structure for high-speed (> 40 GHz) electroabsorption modulators[J],2010, 2010. |
| APA | Wang, Jian,Xiong, Bing,Cai, Peng-Fei,Tian, Jian-Bo,Sun, Chang-Zheng,&Luo, Yi.(2010).Novel planar electrode structure for high-speed (> 40 GHz) electroabsorption modulators.. |
| MLA | Wang, Jian,et al."Novel planar electrode structure for high-speed (> 40 GHz) electroabsorption modulators".(2010). |
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