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	High speed semiconductor light sources based on direct modulation and external modulation
	Luo Yi ; Xu Jian-ming ; Huang Jin ; Sun Chang-zheng ; Xiong Bing ; Cai Peng-fei
	2010-05-06 ; 2010-05-06
关键词	Practical/ aluminium compounds distributed feedback lasers gallium compounds indium compounds optical fibre communication optical modulation quantum well lasers semiconductor lasers sigma-delta modulation/ high speed semiconductor light sources direct modulation external modulation semiconductor lasers fiber communication systems quantum well DFB laser diode access network small signal modulation high-speed EA modulator bit rate 10 Gbit/s temperature 88 K frequency 15 GHz bit rate 40 Gbit/s AlGaInAs/ A4255P Lasing action in semiconductors A4260F Laser beam modulation, pulsing and switching mode locking and tuning A4260B Design of specific laser systems B6260 Optical communication B4320J Semiconductor lasers B4330B Laser beam modulation, pulsing and switching mode locking and tuning/ bit rate 1.0E+10 bit/s temperature 8.8E+01 K frequency 1.5E+10 Hz bit rate 4.0E+10 bit/s/ AlGaInAs/ss Al/ss As/ss Ga/ss In/ss
中文摘要	Directly and externally modulated semiconductor lasers are key components in modern fiber communication systems. Firstly, the structure and fabrication process of a directly modulated AlGalnAs multiple quantum well DFB laser diode for 10 Gb/s access network were presented. AlGalnAs quantum wells had large conduction band offset, which led to improved temperature performance. A characteristic temperature as high as 88 K had been demonstrated for the AlGalnAs semiconductor laser diodes. In addition, the 3 dB small signal modulation bandwidth of the device was over 15 GHz. Secondly, a high-speed EA modulator integrated DFB laser diode for 40 Gb/s trunkline communication system was described. The device was based on identical epitaxial layer integration scheme and was mounted on an Al/sub 2/O/sub 3/-based microwave submount. The extinction ratio of the integrated device was larger than 13 dB at a bias of -3 V and its 3 dB bandwidth was measured to be over 40 GHz.
语种	中文 ; 中文
出版者	Editorial Board of Journal of Infrared and Laser Engineering ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/10679]
专题	清华大学
推荐引用方式 GB/T 7714	Luo Yi,Xu Jian-ming,Huang Jin,et al. High speed semiconductor light sources based on direct modulation and external modulation[J],2010, 2010.
APA	Luo Yi,Xu Jian-ming,Huang Jin,Sun Chang-zheng,Xiong Bing,&Cai Peng-fei.(2010).High speed semiconductor light sources based on direct modulation and external modulation..
MLA	Luo Yi,et al."High speed semiconductor light sources based on direct modulation and external modulation".(2010).

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