Growth of excellent-quality Nd : LuVO4 single crystal and laser properties

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 激光与光电子功能材料研发中心

	Growth of excellent-quality Nd : LuVO4 single crystal and laser properties
	Zhao SR ; Zhang HJ ; Liu JH ; Wang JY ; Xu XG ; Zhao ZW ; Xu J ; Jiang MH
刊名	j. cryst. growth
	2005
卷号	279 期号:1-2 页码:146
关键词	etching Czochralski method vanadates solid-state lasers
ISSN号	0022-0248
中文摘要	high-quality nd:luvo4 single crystal was successfully grown by czochralski method. the assessment of the crystalline quality by the chemical etching method and conoscope image was reported. the absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of nd: luvo4 were measured. laser performance was achieved with nd:luvo4 crystal for the transition of f-4(3/2) -> i-4(11/2) (corresponding wavelength 1065.8 nm) in an actively q-switched operation, and the average output power reached 5.42 w at a pulse repetition frequency (prf) of 40 khz under pump power of 18 w, giving an optical conversion efficiency of 30.1%. the pulse energy and peak power reached 138 mu j and 16.2 kw at prf of 25 khz under pump power of 14.2 w, and the pulse duration was 8.5 ns. (c) 2005 elsevier b.v. all rights reserved.
学科主题	光学材料;晶体
收录类别	EI
语种	英语
WOS记录号	WOS:000229348400021
公开日期	2009-09-24
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/5439]
专题	上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式 GB/T 7714	Zhao SR,Zhang HJ,Liu JH,et al. Growth of excellent-quality Nd : LuVO4 single crystal and laser properties[J]. j. cryst. growth,2005,279(1-2):146, 153.
APA	Zhao SR.,Zhang HJ.,Liu JH.,Wang JY.,Xu XG.,...&Jiang MH.(2005).Growth of excellent-quality Nd : LuVO4 single crystal and laser properties.j. cryst. growth,279(1-2),146.
MLA	Zhao SR,et al."Growth of excellent-quality Nd : LuVO4 single crystal and laser properties".j. cryst. growth 279.1-2(2005):146.