Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 特种无机涂层重点实验室 > 期刊论文

	Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure
	Li, Xiaoxuan 1; Bian, Jiming 1,2; Wang, Minhuan 1; Miao, Lihua 1; Liu, Hongzhu 1; Qin, Fuwen 1; Zhang, Yuzhi 2; Luo, Yingmin 1
刊名	MATERIALS RESEARCH BULLETIN
	2016-05-01
卷号	77 页码:199-204
关键词	Nitrides Oxide Thin films Sputtering Electrical properties
英文摘要	The nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure was realized by sputtering deposition of VO2 films on p-GaN/sapphire substrates. The structure and electrical properties of the as-grown VO2/p-GaN/sapphire heterostructure were investigated systematically. The distinct reversible semiconductor-to-metal transition (SMT) with resistance change up to nearly two orders of magnitude was observed for the sample deposited at the optimized conditions. Moreover, the clear rectifying current-voltage characteristics originated from the n-VO2/p-GaN interface were demonstrated both before and after SMT of VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Our present finding demonstrated the feasibility of integrating correlated oxide and wide bandgap nitride semiconductors, and will further motivate research in novel devices with combined functional properties of both kinds of materials. (C) 2016 Elsevier Ltd. All rights reserved.
WOS标题词	Science & Technology ; Technology
类目[WOS]	Materials Science, Multidisciplinary
研究领域[WOS]	Materials Science
关键词[WOS]	METAL-INSULATOR-TRANSITION ; VO2 THIN-FILMS ; DENSITY ; MEMORY
收录类别	SCI
语种	英语
WOS记录号	WOS:000374360700029
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23123]
专题	上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文
作者单位	1.Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Li, Xiaoxuan,Bian, Jiming,Wang, Minhuan,et al. Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J]. MATERIALS RESEARCH BULLETIN,2016,77:199-204.
APA	Li, Xiaoxuan.,Bian, Jiming.,Wang, Minhuan.,Miao, Lihua.,Liu, Hongzhu.,...&Luo, Yingmin.(2016).Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure.MATERIALS RESEARCH BULLETIN,77,199-204.
MLA	Li, Xiaoxuan,et al."Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure".MATERIALS RESEARCH BULLETIN 77(2016):199-204.