Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 人工晶体研究中心 > 期刊论文

	Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle
	Wang, Hua-Jie 1,2; Liu, Xue-Chao 1; Kong, Hai-Kuan 1; Xin, Jun 1; Gao, Pan 1; Shi, Er-Wei 1
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2016-07-01
卷号	45 期号:7 页码:3263-3267
关键词	Porous aluminum nitride physical vapor transport thermal conductivity low dielectric constant
英文摘要	Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5-6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.
WOS标题词	Science & Technology ; Technology ; Physical Sciences
类目[WOS]	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Engineering ; Materials Science ; Physics
收录类别	SCI
语种	英语
WOS记录号	WOS:000377434100003
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23003]
专题	上海硅酸盐研究所_人工晶体研究中心_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Wang, Hua-Jie,Liu, Xue-Chao,Kong, Hai-Kuan,et al. Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(7):3263-3267.
APA	Wang, Hua-Jie,Liu, Xue-Chao,Kong, Hai-Kuan,Xin, Jun,Gao, Pan,&Shi, Er-Wei.(2016).Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle.JOURNAL OF ELECTRONIC MATERIALS,45(7),3263-3267.
MLA	Wang, Hua-Jie,et al."Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle".JOURNAL OF ELECTRONIC MATERIALS 45.7(2016):3263-3267.