SnS 掺杂对P3HT/PCBM 体系太阳能电池光电特性的影响研究 | |
Lu Guan-Hong1,2; Zhao Xin-Luo1; Wang Yan2; Zhu Shu-Ying2; Sun Jing2; Xie Xiao-Feng2 | |
刊名 | JOURNAL OF INORGANIC MATERIALS
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2016-03-20 | |
卷号 | 31期号:3页码:263-268 |
关键词 | solar cells SILAR SnS multilayer heterojunction |
其他题名 | Effects of SnS Doping on Photovoltaic Performance of P3HT:PCBM Multilayer Heterojunction Solar Cells |
英文摘要 | SnS was deposited on the surface of FTO/TiO2 electrodes with different molar concentration ratio of Sn2+ and S2- using successive ionic layer absorption and reaction (SILAR) method. Afterwards, the as-prepared TiO2/SnS composite electrode was assembled into a multilayer heterojunction solar cell with an architecture of FTO/TiO2/SnS/P3HT:PCBM/Ag. The TiO2/SnS composite films were characterized by scanning electron microscopy (SEM), Raman spectra analysis and Glow discharge optical emission spectrometer (GD-OES). The photovoltaic performance of solar cells were determined using UV-Vis spectra and I-V curves. Results showed that incorporation of SnS significantly improved the short-circuit current of the multilayer heterojunction solar cells. Meanwhile, the dependence of the photovoltaic performance of solar cells on the molar concentration ratio of Sn2+/S2- was investigated systematically. During the SILAR processes, a series of electrodes were prepared in the precusor solutions with different Sn2+/S2- molar concentration ratios (n(Sn2+):n(S2-)=1:1, 1:1.25, 1:1.5, 1:1.75 and 1:2). Moreover, GD-OES method distinguished the effects of Sn2+/S2- ratio on the SnSx layer deposition. It was found that the Sn2+/S2- ratio of SILAR precursors, dominated by thickness and chemical composition of SnSx, affected photovoltaic performance of the solar cells significantly. I-V test results testified that the ratio of Sn2+/S2- molar concentration was optimized at 1:1.5, which resulted in the highest photoelectric conversion efficiency. The open-circuit voltage (V-infinity), short-circuit current density (J(sc)), fill factor (FF), and power conversion efficiency (PCE) reached 0.373 V, 1.92 mA/cm(2), 51.2%, and 0.369%, respectively. |
WOS标题词 | Science & Technology ; Technology |
类目[WOS] | Materials Science, Ceramics |
研究领域[WOS] | Materials Science |
关键词[WOS] | TIO2 PHOTOANODE ; BUFFER LAYER ; QUANTUM DOTS ; EFFICIENCY ; DEPOSITION |
收录类别 | SCI |
语种 | 中文 |
WOS记录号 | WOS:000370927000006 |
内容类型 | 期刊论文 |
源URL | [http://ir.sic.ac.cn/handle/331005/23203] ![]() |
专题 | 上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文 |
作者单位 | 1.Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China |
推荐引用方式 GB/T 7714 | Lu Guan-Hong,Zhao Xin-Luo,Wang Yan,等. SnS 掺杂对P3HT/PCBM 体系太阳能电池光电特性的影响研究[J]. JOURNAL OF INORGANIC MATERIALS,2016,31(3):263-268. |
APA | Lu Guan-Hong,Zhao Xin-Luo,Wang Yan,Zhu Shu-Ying,Sun Jing,&Xie Xiao-Feng.(2016).SnS 掺杂对P3HT/PCBM 体系太阳能电池光电特性的影响研究.JOURNAL OF INORGANIC MATERIALS,31(3),263-268. |
MLA | Lu Guan-Hong,et al."SnS 掺杂对P3HT/PCBM 体系太阳能电池光电特性的影响研究".JOURNAL OF INORGANIC MATERIALS 31.3(2016):263-268. |
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