Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

CORC > 昆明植物研究所 > 中国科学院昆明植物研究所 > 植物化学与西部植物资源持续利用国家重点实验室

	Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
	Zhou, Guangdong 1; Sun, Bai 1,2; Yao, Yanqing 1; Zhang, Huihui 1; Zhou, Ankun 3,4; Alameh, Kamal 5; Ding, Baofu 1,5; Song, Qunliang 1,5,6
刊名	APPLIED PHYSICS LETTERS
	2016-10-03
卷号	109 期号:14
英文摘要	MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of similar to 240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of similar to 10(2) for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. Published by AIP Publishing.
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
关键词[WOS]	DATA-STORAGE ; HYSTERESIS ; MECHANISM ; DEVICES ; FILMS ; NANODEVICES ; CHARGES ; MATRIX
收录类别	SCI
语种	英语
WOS记录号	WOS:000386152800074
内容类型	期刊论文
源URL	[http://ir.kib.ac.cn/handle/151853/33757]
专题	昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室
作者单位	1.Southwest Univ, Inst Clean Energy & Adv Mat ICEAM, Chongqing 400715, Peoples R China 2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong 999077, Hong Kong, Peoples R China 3.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Peoples R China 4.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China 5.Edith Cowan Univ, Electron Sci Res Inst, 270 Joondalup Dr, Joondalup, WA 6027, Australia 6.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guangdong,Sun, Bai,Yao, Yanqing,et al. Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires[J]. APPLIED PHYSICS LETTERS,2016,109(14).
APA	Zhou, Guangdong.,Sun, Bai.,Yao, Yanqing.,Zhang, Huihui.,Zhou, Ankun.,...&Song, Qunliang.(2016).Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires.APPLIED PHYSICS LETTERS,109(14).
MLA	Zhou, Guangdong,et al."Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires".APPLIED PHYSICS LETTERS 109.14(2016).