Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes | |
Qin, SJ(秦双娇); Peng, F(彭飞); Chen, XQ(陈雪晴); Pan, GB(潘革波) | |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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2016 | |
卷号 | 18期号:8 |
通讯作者 | Pan, GB(潘革波) |
英文摘要 | The electrodeposition of Ni on single-crystal n-GaN(0001) film from acetate solution was investigated using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, atomic force microscopy, and electrochemical techniques. The as-deposited Ni/n-GaN(0001) had a flat band potential of U-fb = -1.0 V vs. Ag/AgCl, which was much lower than that of bare GaN(0001). That is, a more feasible charge-transfer process occurred at the Ni/n-Ga(0001) interface. On the basis of a Tafel plot, an exchange current density of similar to 166 x 10(-4) mA cm(-2) was calculated. The nuclei density increased when the applied potential was varied from -0.9 V to -1.2 V and, eventually the whole substrate was covered. In addition, the current transient measurements revealed that the Ni deposition process followed instantaneous nucleation in 5 mM Ni(CH3COO)(2) + 0.5 M H3BO3. |
关键词[WOS] | METAL ELECTRODEPOSITION ; GAN ; SEMICONDUCTORS ; CARRIER ; ALLOYS ; GROWTH ; MOVPE |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000371953000037 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/4732] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
推荐引用方式 GB/T 7714 | Qin, SJ,Peng, F,Chen, XQ,et al. Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(8). |
APA | Qin, SJ,Peng, F,Chen, XQ,&Pan, GB.(2016).Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(8). |
MLA | Qin, SJ,et al."Electrochemical fabrication and interfacial charge-transfer process of Ni/GaN(0001) electrodes".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.8(2016). |
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