Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 先进材料研究部 > 李立强团队

	Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors
	Chen, XS; Xu, ZY; Wu, KJ; Zhang, SN; Li, HW; Meng, YC; Wang, ZW; Li, LQ(李立强); Ma, XM
刊名	LANGMUIR
	2016
卷号	32 期号:37
通讯作者	Ma, XM ; Li, LQ(李立强)
英文摘要	The modification of dielectric surface with a self-assembled monolayer (SAM) such as octadecyltrichlorosilane (OTS) is a widely used method to tune the electrical property of diverse electronic devices based on organic semiconductors, graphene, transition metal dichalcogenides (TMDs), and so forth. The surface roughness of self-assembled OTS monolayer is a key factor in determining its effect on device performance, but the preparation of an ultrasmooth OTS monolayer is a technologically challenging task. In this work, an ultrasmooth OTS monolayer is prepared via a facile peeling method, which may serve as a postremedy strategy to remove the protuberant aggregates. Such a method has not been reported before. With organic semiconductors as a testing model, ultrasmooth OTS may significantly improve the charge mobility of organic field-effect transistors (OFETs). P-type dinaphtho [2,3-b :2',3'-f]thieno[3,2-b]thiophene (DNTT) OFET with an ultrasmooth OTS monolayer yields good reproducibility and unprecendented maximum mobility of 8.16 cm(2) V-1 s(-1), which is remarkably superior to that of the OFET with a pristine OTS monolayer. This work develops a simple method to resolve the common and significant problem of the quality of OTS modification, which would be highly promising for electronic applications as well as other fields such as surface and interface engineering.
关键词[WOS]	FIELD-EFFECT TRANSISTORS ; THIN-FILM TRANSISTORS ; MOLECULAR-ORIENTATION ; MONO LAYERS ; OCTADECYLTRICHLOROSILANE ; GRAPHENE ; SURFACE ; STABILITY ; GROWTH ; SEMICONDUCTOR
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000384038200014
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4909]
专题	苏州纳米技术与纳米仿生研究所_先进材料研究部_李立强团队
推荐引用方式 GB/T 7714	Chen, XS,Xu, ZY,Wu, KJ,et al. Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors[J]. LANGMUIR,2016,32(37).
APA	Chen, XS.,Xu, ZY.,Wu, KJ.,Zhang, SN.,Li, HW.,...&Ma, XM.(2016).Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors.LANGMUIR,32(37).
MLA	Chen, XS,et al."Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors".LANGMUIR 32.37(2016).