Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 秦华团队

	Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
	Ma, ZY; Wang, W; Yang, HF; Jiang, XF; Yu, J; Qin, H(秦华); Xu, L; Chen, KJ; Huang, XF; Li, W
刊名	JOURNAL OF APPLIED PHYSICS
	2016
卷号	119 期号:7
通讯作者	Ma, ZY
英文摘要	The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9V and better retention characteristics of 4.7V after 10(5) s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory. (C) 2016 AIP Publishing LLC.
关键词[WOS]	QUANTUM DOTS ; HFO2 FILMS ; SILICON ; DIELECTRICS ; STABILITY ; ENERGY ; ALD
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375158000030
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4748]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
推荐引用方式 GB/T 7714	Ma, ZY,Wang, W,Yang, HF,et al. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition[J]. JOURNAL OF APPLIED PHYSICS,2016,119(7).
APA	Ma, ZY.,Wang, W.,Yang, HF.,Jiang, XF.,Yu, J.,...&Feng, D.(2016).Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition.JOURNAL OF APPLIED PHYSICS,119(7).
MLA	Ma, ZY,et al."Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition".JOURNAL OF APPLIED PHYSICS 119.7(2016).