Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
	Li, XJ; Zhao, DG; Jiang, D; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Yang, J; He, XG; Zhang, LQ(张立群)
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2016
卷号	34 期号:1
通讯作者	Zhao, DG
英文摘要	The influence of unintentionally doped carbon impurities of i-GaN layer on the performance of GaN-based p-i-n photodetectors is investigated. The photoluminescence spectra exhibits that the carbon impurities are strongly involved in deep trap level-related yellow luminescence band. The results of secondary ion mass spectroscopy suggest that the residual carbon impurities in the i-layer have great effect on the generation of deep trap levels, and have a strong influence on the spectral responsivity and dark current of photodetectors. Thus, the way to decrease the residual carbon impurity concentration of the i-GaN layer, such as enlarging the growth pressure, can improve the performance of p-i-n photodetectors. (C) 2015 American Vacuum Society.
关键词[WOS]	ULTRAVIOLET PHOTODETECTORS ; HIGH-POWER ; PHOTODIODES ; DETECTORS ; DIODES ; GROWTH
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375799800005
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4796]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Li, XJ,Zhao, DG,Jiang, D,et al. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(1).
APA	Li, XJ.,Zhao, DG.,Jiang, D.,Chen, P.,Zhu, JJ.,...&Yang, H.(2016).Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,34(1).
MLA	Li, XJ,et al."Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34.1(2016).