Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes
	Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Yang, J; He, XG; Li, XJ; Li, X
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2016
卷号	96
通讯作者	Zhao, DG
英文摘要	The droop behaviors of two InGaN/GaN multiple-quantum-well blue-green light-emitting diodes grown on c-plane sapphires with different In content are investigated. The higher In-content sample exhibits a lower efficiency, followed by a more significant droop as current increases in comparison with the lower-In-content diode. However, it is found that for both samples their efficiency reduction trend with increasing carrier density is nearly the same. Combining with the recombination rate equations, an analysis reveals that at the same injection current level, the carrier density in the higher-In-content quantum wells which have stronger polarization effect is larger due to the smaller bimolecular recombination coefficient, resulting in a more significant droop with current. Therefore, a study on the dependence of efficiency on carrier density can provide a clear elucidation to the physical mechanism of the efficiency droop behavior. (C) 2016 Elsevier Ltd. All rights reserved.
关键词[WOS]	EFFICIENCY-DROOP ; TMIN FLOW ; LAYER
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000383308700025
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4772]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, W,Zhao, DG,Jiang, DS,et al. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes[J]. SUPERLATTICES AND MICROSTRUCTURES,2016,96.
APA	Liu, W.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Du, GT.(2016).Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes.SUPERLATTICES AND MICROSTRUCTURES,96.
MLA	Liu, W,et al."Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes".SUPERLATTICES AND MICROSTRUCTURES 96(2016).