Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses
Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; He, XG; Li, XJ; Liu, JP(刘建平)
刊名VACUUM
2016
卷号129
通讯作者Zhao, DG
英文摘要The performance and efficiency droop behaviors of InGaN/GaN multiple quantum well (MQW) green LEDs with various low temperature grown GaN cap (LT-cap) layer are investigated. It is found that the output power increases when a thin LT-cap layer (0.37 nm) is inserted and it decreases as the LT-cap layer thickness increases up to 1.5 nm. In addition, the apparent efficiency droop decreases when the thickness of LT-cap layer increases from 0 to 1.5 nm. However, the related physical mechanisms are different. When the relatively thin LT-cap layers are inserted, the carrier confinement effect of QWs enhances due to the increased In content of InGaN QWs. In this case, electrons are hardly to escape from MQW region to pGaN region, which results in a relatively high output power at high injection current, thus a small efficiency droop is obtained. However, when the LT-cap layer thickness is relatively thick, due to the large defect density of InGaN/GaN MQWs, although the small efficiency droop also can be observed, the relatively low output power is obtained at all injection currents. (C) 2016 Elsevier Ltd. All rights reserved.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000377313500015
内容类型期刊论文
源URL[http://ir.sinano.ac.cn/handle/332007/4599]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Yang, J,Zhao, DG,Jiang, DS,et al. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses[J]. VACUUM,2016,129.
APA Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Yang, H.(2016).Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses.VACUUM,129.
MLA Yang, J,et al."Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses".VACUUM 129(2016).
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