Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO

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	Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO
	Jin, L(靳琳); Chen, Q(陈沁); Liu, WW(柳婉婉); Song, SC(宋世超)
刊名	PLASMONICS
	2016
卷号	11 期号:4
通讯作者	Chen, Q(陈沁)
英文摘要	An electro-absorption modulator based on indium tin oxide is proposed by constructing a waveguide consisting of metal-dielectric-ITO-dielectric-Si stack. Applying a negative voltage bias on the ITO layer, carrier accumulation occurs at both dielectric-ITO interfaces, which dramatically changes the guided mode properties due to the epsilon-near-zero effect. By tuning the real part of the permittivity around zero, the guided plasmonic mode concentrates in either ITO or dielectric layers, resulting in a high propagation loss. These dual carrier accumulation layers significantly improve the extinction ratio of the modulator. A further improvement is obtained by using high refractive index dielectric thin layers, which provides a strong optical confinement in the carrier accumulation layers. The dual carrier accumulation layer device shows a 200 % increase of the modulation efficiency compared to a single accumulation layer design. A modulation depth of 9.9 dB/mu m can be achieved by numerical simulation.
关键词[WOS]	PLASMONIC WAVE-GUIDES ; OPTICAL MODULATORS ; PLASMOSTOR ; DEPENDENCE
收录类别	SCI
语种	英语
WOS记录号	WOS:000379179300018
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4831]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_陈沁团队
推荐引用方式 GB/T 7714	Jin, L,Chen, Q,Liu, WW,et al. Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO[J]. PLASMONICS,2016,11(4).
APA	Jin, L,Chen, Q,Liu, WW,&Song, SC.(2016).Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO.PLASMONICS,11(4).
MLA	Jin, L,et al."Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO".PLASMONICS 11.4(2016).