The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米加工公共平台

	The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
	Chen, P; Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Yang, J; Li, X; Le, LC; He, XG; Liu, W
刊名	AIP ADVANCES
	2016
卷号	6 期号:3
通讯作者	Zhao, DG
英文摘要	In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes. (C) 2016 Author(s).
关键词[WOS]	LIGHT-EMITTING DEVICES ; LOW-ASPECT-RATIO ; HIGH-POWER ; GROWTH ; LAYERS
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000373684200052
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4916]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Chen, P,Zhao, DG,Jiang, DS,et al. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes[J]. AIP ADVANCES,2016,6(3).
APA	Chen, P.,Zhao, DG.,Jiang, DS.,Zhu, JJ.,Liu, ZS.,...&Du, GT.(2016).The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes.AIP ADVANCES,6(3).
MLA	Chen, P,et al."The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes".AIP ADVANCES 6.3(2016).