Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment | |
Hao, RH; Fu, K(付凯); Yu, GH(于国浩); Li, WY; Yuan, J; Song, L; Zhang, ZL; Sun, SC; Li, XJ; Cai, Y(蔡勇) | |
刊名 | APPLIED PHYSICS LETTERS |
2016 | |
卷号 | 109期号:15 |
通讯作者 | Zhang, XP ; Zhang, BS(张宝顺) |
英文摘要 | In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 x 10(7), a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work. Published by AIP Publishing. |
关键词[WOS] | FIELD-EFFECT TRANSISTORS ; GATE ALGAN/GAN HEMTS ; GAN ; ENHANCEMENT ; PASSIVATION ; HFET |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000386534800027 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/4867] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
推荐引用方式 GB/T 7714 | Hao, RH,Fu, K,Yu, GH,et al. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment[J]. APPLIED PHYSICS LETTERS,2016,109(15). |
APA | Hao, RH.,Fu, K.,Yu, GH.,Li, WY.,Yuan, J.,...&Zhang, BS.(2016).Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment.APPLIED PHYSICS LETTERS,109(15). |
MLA | Hao, RH,et al."Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment".APPLIED PHYSICS LETTERS 109.15(2016). |
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