Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films

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	Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films
	Mo, YJ; Wang, XD; Yang, MM; Zeng, XH(曾雄辉); Wang, JF(王建峰); Xu, K(徐科)
刊名	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
	2016
卷号	253 期号:3
通讯作者	Wang, XD
英文摘要	In this paper, temperature-dependent cathodoluminescence (CL) spectra of Er-implanted GaN thin films were measured. The effects of accelerating voltage and temperature on the CL spectra of Er-implanted GaN were investigated. In the near band-edge emission region, the competition mechanism between DAP and (DX)-X-0 was disclosed. A slight blue shift of the DAP emission peak with the increase of accelerating voltage was observed. The temperature dependence of the CL intensity of FX emission reveals a binding energy of similar to 32 meV in Er-implanted GaN. Below 182 K, the H-2(11/2) state of Er3+ is not thermally populated and the yellow band luminescence (YL) related to the defects was observed. At higher temperature, the thermal coupling between the two excited state levels of H-2(11/2) and S-4(3/2) of Er3+ is obvious and the YL is nearly invisible. Even at 373 K, a strong green emission at 537 nm can be observed, which indicates the Er-doped GaN is promising to be applied in high-temperature environments. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词[WOS]	GROWN GAN ; SEMICONDUCTORS ; ERBIUM
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000371634800017
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4742]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Mo, YJ,Wang, XD,Yang, MM,et al. Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2016,253(3).
APA	Mo, YJ,Wang, XD,Yang, MM,Zeng, XH,Wang, JF,&Xu, K.(2016).Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,253(3).
MLA	Mo, YJ,et al."Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253.3(2016).