High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

	High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
	Shuo Zhang ; Ping Ma ; Boting Liu ; Dongxue Wu ; Yuliang Huang ; Junxi Wang ; Jinmin Li
刊名	aip advances
	2016
卷号	6 期号:6 页码:065301
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28108]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Shuo Zhang,Ping Ma,Boting Liu,et al. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition[J]. aip advances,2016,6(6):065301.
APA	Shuo Zhang.,Ping Ma.,Boting Liu.,Dongxue Wu.,Yuliang Huang.,...&Jinmin Li.(2016).High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition.aip advances,6(6),065301.
MLA	Shuo Zhang,et al."High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition".aip advances 6.6(2016):065301.