Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission

	Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission
	Xiang Chen ; Jianchang Yan ; Yun Zhang ; Yingdong Tian ; Yanan Guo ; Shuo Zhang ; Tongbo Wei ; Junxi Wang ; Jin Min Li
刊名	ieee photonics journal
	2016
卷号	8 期号:5 页码:2300211
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28081]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Xiang Chen,Jianchang Yan,Yun Zhang,et al. Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission[J]. ieee photonics journal,2016,8(5):2300211.
APA	Xiang Chen.,Jianchang Yan.,Yun Zhang.,Yingdong Tian.,Yanan Guo.,...&Jin Min Li.(2016).Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission.ieee photonics journal,8(5),2300211.
MLA	Xiang Chen,et al."Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission".ieee photonics journal 8.5(2016):2300211.