Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers

	Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers
	Guijuan Zhao ; Lianshan Wang ; Shaoyan Yang ; Huijie Li ; Hongyuan Wei ; Dongyue Han ; Zhanguo Wang
刊名	scientific reports
	2016
卷号	6 页码:20787
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27765]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Guijuan Zhao,Lianshan Wang,Shaoyan Yang,et al. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers[J]. scientific reports,2016,6:20787.
APA	Guijuan Zhao.,Lianshan Wang.,Shaoyan Yang.,Huijie Li.,Hongyuan Wei.,...&Zhanguo Wang.(2016).Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.scientific reports,6,20787.
MLA	Guijuan Zhao,et al."Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers".scientific reports 6(2016):20787.