Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers

	Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers
	Yanhua Zhang ; Wenquan Ma ; Jianliang Huang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Chengcheng Zhao ; Haiming Ji ; Tao Yang
刊名	IEEE Electron Device Letters
	2016
卷号	37 期号:9 页码:1166 - 1169
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27718]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yanhua Zhang,Wenquan Ma,Jianliang Huang,et al. Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers[J]. IEEE Electron Device Letters,2016,37(9):1166 - 1169.
APA	Yanhua Zhang.,Wenquan Ma.,Jianliang Huang.,Yulian Cao.,Ke Liu.,...&Tao Yang.(2016).Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers.IEEE Electron Device Letters,37(9),1166 - 1169.
MLA	Yanhua Zhang,et al."Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers".IEEE Electron Device Letters 37.9(2016):1166 - 1169.