Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

	Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress
	Yao Nan ; Li Wei† ; Zhao Yihao ; Zhong Li ; Liu Suping ; Ma Xiaoyu
刊名	spie proceedings
	2016
卷号	9671 页码:96710h-3
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27672]
专题	半导体研究所_光电子器件国家工程中心
推荐引用方式 GB/T 7714	Yao Nan,Li Wei†,Zhao Yihao,et al. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress[J]. spie proceedings,2016,9671:96710h-3.
APA	Yao Nan,Li Wei†,Zhao Yihao,Zhong Li,Liu Suping,&Ma Xiaoyu.(2016).Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress.spie proceedings,9671,96710h-3.
MLA	Yao Nan,et al."Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress".spie proceedings 9671(2016):96710h-3.