Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

	Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells
	Bing-Hui Niu ; Teng-Fei Yan ; Hai-Qiao Ni ; Zhi-Chuan Niu ; Xin-Hui Zhang
刊名	chinese physics letters
	2016
卷号	33 期号:10 页码:107802
学科主题	半导体物理
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28060]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Bing-Hui Niu,Teng-Fei Yan,Hai-Qiao Ni,et al. Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells[J]. chinese physics letters,2016,33(10):107802.
APA	Bing-Hui Niu,Teng-Fei Yan,Hai-Qiao Ni,Zhi-Chuan Niu,&Xin-Hui Zhang.(2016).Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells.chinese physics letters,33(10),107802.
MLA	Bing-Hui Niu,et al."Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells".chinese physics letters 33.10(2016):107802.