Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer

	Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer
	Zhou Yifan; Chen Sihai; Samson Edmond; Alain Bosseboeuf
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2013
英文摘要	This paper reports an experimental investigation of deep isotropic etching in HF:HNO3:CH3COOH solution for the fabrication of large microcavities in a silicon wafer. The effects of different practical parameters, e.g., back protective layer, etch window diameter and agitation method, are evaluated experimentally and then discussed. Results show that, for the conditions used, the back protective layer has little influence on the etched depth. Experimental etched profiles are in agreement with the mathematical model of Kuiken's assuming a purely diffusion-controlled etching. Vertical anisotropy and asymmetry of etched profiles were observed. A 100 µm deep hemispherical microcavity was obtained for a 60 min etching with magnetic agitation at room temperature.
收录类别	SCI
原文出处	http://iopscience.iop.org/1347-4065/52/7R/076503/
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/5242]
专题	深圳先进技术研究院_其他
作者单位	JAPANESE JOURNAL OF APPLIED PHYSICS
推荐引用方式 GB/T 7714	Zhou Yifan,Chen Sihai,Samson Edmond,et al. Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2013.
APA	Zhou Yifan,Chen Sihai,Samson Edmond,&Alain Bosseboeuf.(2013).Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer.JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	Zhou Yifan,et al."Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer".JAPANESE JOURNAL OF APPLIED PHYSICS (2013).