Dielectric properties of Ag@SiO2/Epoxy composite for embedded capacitor applications | |
Xianwen Liang; Shuhui Yu; Suibin Luo; Zhiqiang Zhuang; Sun Rong | |
2010 | |
会议名称 | 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010 |
英文摘要 | Nano-sized Ag particles were prepared through a wet chemical reduction route and treated with tetraethoxysilane (TEOS) to form an amorphous SiO 2thin layer on the particles surface (Ag@SiO2) Ag@SiO2/Epoxy composite film was fabricated via coating process The experimental results showed that the dielectric constant k increased gradually with Ag@SiO2 content before reaching the percolation threshold The value of dielectric constant k was 28 at 100 Hz for the composite containing 20 vol% Ag@SiO2, which was 5 times larger than that of the pure epoxy resin In contrast, the value ofloss tanδ remained at a low level (<002) before reaching the threshold Tanδ was 0014 for the composite containing 20 vol% Ag@SiO2,which was even lower than that of the pure epoxy resin (0018) When the Ag@SiO2 content reached 25 vol%, both of the k and tanδ values increased substantially, indicating formation of conducting pathway between Ag particles The results implied that when Ag@SiO2 content was at a low level, the insulating SiO2 shell served as electrons barrier layer between Ag cores and prevented electrons from transferring from one Ag core to another under an external field As a result, the measured k value increased with Ag@SiO2 content, while the tanδ remained low However, when Ag@SiO2 filler loading reached a higher level and was in the vicinity of critical concentration, Ag cores was so close to each other and the conducting pathway could be developed in the amorphous SiO2 hell, leading to remarkable growth of k and tanδ |
收录类别 | EI |
语种 | 英语 |
内容类型 | 会议论文 |
源URL | [http://ir.siat.ac.cn:8080/handle/172644/2859] ![]() |
专题 | 深圳先进技术研究院_集成所 |
作者单位 | 2010 |
推荐引用方式 GB/T 7714 | Xianwen Liang,Shuhui Yu,Suibin Luo,et al. Dielectric properties of Ag@SiO2/Epoxy composite for embedded capacitor applications[C]. 见:2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. |
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