SEU Reliability Evaluation of 3D ICs

	SEU Reliability Evaluation of 3D ICs
	Huiyun Li; Xiaobo Hu; Cuiping Shao; Jianbin Zhou; Guoqing Xu
刊名	Electronics Letters
	2015
英文摘要	The single-event-upset (SEU) reliability is a concern for three-dimensional (3D) integrated circuits (ICs), mainly due to the carrier mobility change caused by thermo-mechanical stress from through-silicon vias (TSVs) and the shallow trench isolation (STI). A systematic evaluation method is proposed to identify the vulnerability within 3D ICs at design time. The evaluation flow involves the TSV/STI stress-aware mobility variation calculation, sensitive region marking, insertion of excitation signals and then the simulation of the 3D ICs. This method is able to help 3D IC designers to evaluate and enhance the SEU reliability at design time.
收录类别	SCI
原文出处	http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=7042440&url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D7042440
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/6599]
专题	深圳先进技术研究院_集成所
作者单位	Electronics Letters
推荐引用方式 GB/T 7714	Huiyun Li,Xiaobo Hu,Cuiping Shao,et al. SEU Reliability Evaluation of 3D ICs[J]. Electronics Letters,2015.
APA	Huiyun Li,Xiaobo Hu,Cuiping Shao,Jianbin Zhou,&Guoqing Xu.(2015).SEU Reliability Evaluation of 3D ICs.Electronics Letters.
MLA	Huiyun Li,et al."SEU Reliability Evaluation of 3D ICs".Electronics Letters (2015).