Investigation of amorphous RuMoCalloy films as a seedless diffusion barrier for Cup_SiOCH ultralow_k dielectricintegration.

	Investigation of amorphous RuMoCalloy films as a seedless diffusion barrier for Cup_SiOCH ultralow_k dielectricintegration.
	Guohua Jiao; Bo Liu; Qiran Li
刊名	Applied Physics A. Materials Science & Processing
	2015
英文摘要	Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization.
收录类别	SCI
原文出处	http://link.springer.com/article/10.1007/s00339-015-9219-8
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/6588]
专题	深圳先进技术研究院_集成所
作者单位	Applied Physics A. Materials Science & Processing
推荐引用方式 GB/T 7714	Guohua Jiao,Bo Liu,Qiran Li. Investigation of amorphous RuMoCalloy films as a seedless diffusion barrier for Cup_SiOCH ultralow_k dielectricintegration.[J]. Applied Physics A. Materials Science & Processing,2015.
APA	Guohua Jiao,Bo Liu,&Qiran Li.(2015).Investigation of amorphous RuMoCalloy films as a seedless diffusion barrier for Cup_SiOCH ultralow_k dielectricintegration..Applied Physics A. Materials Science & Processing.
MLA	Guohua Jiao,et al."Investigation of amorphous RuMoCalloy films as a seedless diffusion barrier for Cup_SiOCH ultralow_k dielectricintegration.".Applied Physics A. Materials Science & Processing (2015).