High responsivity ultraviolet photodetector realized via a carrier-trapping process

	High responsivity ultraviolet photodetector realized via a carrier-trapping process
	J. S. Liu; C. X. Shan; B. H. Li; Z. Z. Zhang; C. L. Yang; D. Z. Shen; X. W. Fan
刊名	APPLIED PHYSICS LETTERS
	2010
卷号	97 期号:25
英文摘要	Metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films. The responsivity of the photodetector can reach 26 000 A/W at 8 V bias, which is the highest value ever reported for a semiconductor ultraviolet photodetector. The origin of the high responsivityhas been attributed to the carrier-trapping process occurred in the metal-semiconductor interface, which has been confirmed by the asymmetric barrier height at the two sides of the metal-semiconductor interdigital electrodes. The results reported in this paper provide a way to high responsivity UV photodetectors, which thus may address a step toward future applications of UV photodetectors.
收录类别	SCI
原文出处	http://scitation.aip.org/content/aip/journal/apl/97/25/10.1063/1.3527974
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/2687]
专题	深圳先进技术研究院_集成所
作者单位	APPLIED PHYSICS LETTERS
推荐引用方式 GB/T 7714	J. S. Liu,C. X. Shan,B. H. Li,et al. High responsivity ultraviolet photodetector realized via a carrier-trapping process[J]. APPLIED PHYSICS LETTERS,2010,97(25).
APA	J. S. Liu.,C. X. Shan.,B. H. Li.,Z. Z. Zhang.,C. L. Yang.,...&X. W. Fan.(2010).High responsivity ultraviolet photodetector realized via a carrier-trapping process.APPLIED PHYSICS LETTERS,97(25).
MLA	J. S. Liu,et al."High responsivity ultraviolet photodetector realized via a carrier-trapping process".APPLIED PHYSICS LETTERS 97.25(2010).