Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 无机功能材料与器件重点实验室 > 期刊论文

	Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon
	Xu, Hanni 1,2; Liu, Yi 1,2; Xu, Bo 1,2; Xia, Yidong 1,2; Wang, Genshui 3; Yin, Jiang 1,2; Liu, Zhiguo 1,2
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2016-09-21
卷号	49 期号:37
关键词	ferroelectric diode memristor KNN domain configuration
英文摘要	We report polarization-controlled tunable rectifying behaviors in (K,Na)NbO3 (KNN)/LaNiO3 (LNO) heterostructures on silicon. The heterostructure shows a forward diode behavior at both the high resistance state and the low resistance state. The amplitude dependent rectifying features are attributed to the ferroelectric modulation effect on both the width of the depletion region and the height of the potential barrier at the KNN/LNO interface. By controlling the domain configurations using the writing voltage, the rectifying behaviors can be regulated and immediate states can be tuned. Our work shows the potential applications of KNN films in ferroelectric memristors.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
关键词[WOS]	LANIO3 THIN-FILMS
收录类别	SCI
语种	英语
WOS记录号	WOS:000384093000012
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22134]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
作者单位	1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 2.Nanjing Univ, Dept Mat Sci & Engn, Coll Engn & Appl Sci, Nanjing 210093, Jiangsu, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Xu, Hanni,Liu, Yi,Xu, Bo,et al. Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2016,49(37).
APA	Xu, Hanni.,Liu, Yi.,Xu, Bo.,Xia, Yidong.,Wang, Genshui.,...&Liu, Zhiguo.(2016).Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon.JOURNAL OF PHYSICS D-APPLIED PHYSICS,49(37).
MLA	Xu, Hanni,et al."Polarization-controlled tunable rectifying behaviors in highly oriented (K,Na)NbO3/LaNiO3 heterostructures on silicon".JOURNAL OF PHYSICS D-APPLIED PHYSICS 49.37(2016).