Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 无机功能材料与器件重点实验室 > 期刊论文

	Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic
	Tian, Tian 1,4; Cheng, Lihong 1; Zheng, Liaoying 1; Xing, Juanjuan 2; Gu, Hui 2; Bernik, Slavko 3; Zeng, Huarong 1; Ruan, Wei 1; Zhao, Kunyu 1; Li, Guorong 1
刊名	ACTA MATERIALIA
	2016-10-15
卷号	119 页码:136-144
关键词	Thermoelectric Zinc oxide Microstructure Grain boundary Electrical conductivity
英文摘要	ZnO is a promising thermoelectric material for high-temperature applications; however, the strong correlation between the electrical and thermal transport properties has limited their simultaneous optimization to achieve superior thermoelectric performance. In this work, defect engineering was applied to solve this problem. The results revealed that by eliminating the intrinsic acceptor defects at the grain boundaries, the Schottky barrier disappeared, which led to a huge increase in the Hall mobility. Meanwhile, an increased solid solution of the trivalent dopant Al was achieved to increase the carrier concentration. The increased Hall mobility and carrier concentration gave rise to a maximum electrical conductivity (sigma(310K)) of 1.9 x 10(5) S m(-1), showing a metallic-like behavior. Owing to the ultrahigh sigma with moderate Seebeck coefficient, a maximum power factor of 8.2 x 10(-4) W m(-1) K-2 was obtained at 980 K. Moreover, by introducing large numbers of lattice defects in the grains, the lattice thermal conductivity was simultaneously decreased. Therefore, the multiple-doped ZnO ceramic with defect engineering of both grains and grain boundaries optimized the electrical and thermal transport properties in a relatively independent way which provided a new and effective route to optimize the performance of the ZnO-based thermoelectric materials. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
WOS标题词	Science & Technology ; Technology
类目[WOS]	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
研究领域[WOS]	Materials Science ; Metallurgy & Metallurgical Engineering
关键词[WOS]	ENHANCED THERMOELECTRIC PROPERTIES ; GRAIN-BOUNDARY ; AL ; FILMS ; PERFORMANCE ; (ZN1-YMGY)(1-X)ALXO ; VARISTOR ; OXYGEN ; MERIT ; TIO2
收录类别	SCI
语种	英语
WOS记录号	WOS:000384778300013
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22005]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 2.Shanghai Univ, Mat Genome Inst, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China 3.Jozef Stefan Inst, Dept Nanostruct Mat, SI-1000 Ljubljana, Slovenia 4.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Tian, Tian,Cheng, Lihong,Zheng, Liaoying,et al. Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic[J]. ACTA MATERIALIA,2016,119:136-144.
APA	Tian, Tian.,Cheng, Lihong.,Zheng, Liaoying.,Xing, Juanjuan.,Gu, Hui.,...&Li, Guorong.(2016).Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic.ACTA MATERIALIA,119,136-144.
MLA	Tian, Tian,et al."Defect engineering for a markedly increased electrical conductivity and power factor in doped ZnO ceramic".ACTA MATERIALIA 119(2016):136-144.