Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure

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	Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure
	He, B ; Wang, ZJ
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2016-10-01
卷号	122 期号:10
ISSN号	0947-8396
通讯作者	Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
学科主题	Materials Science, Multidisciplinary ; Physics, Applied
收录类别	SCI
资助信息	Chinese Academy of Sciences; National Natural Science Foundation of China [51172238]
语种	英语
公开日期	2016-12-28
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/76247]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	He, B,Wang, ZJ. Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122(10).
APA	He, B,&Wang, ZJ.(2016).Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,122(10).
MLA	He, B,et al."Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 122.10(2016).