Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

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	Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
	Wan, BS ; Yang, BC ; Wang, Y ; Zhang, JY ; Zeng, ZM ; Liu, ZY ; Wang, WH
刊名	NANOTECHNOLOGY
	2015
卷号	26 期号:43
公开日期	2016-12-26
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/60689]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wan, BS,Yang, BC,Wang, Y,et al. Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation[J]. NANOTECHNOLOGY,2015,26(43).
APA	Wan, BS.,Yang, BC.,Wang, Y.,Zhang, JY.,Zeng, ZM.,...&Wang, WH.(2015).Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation.NANOTECHNOLOGY,26(43).
MLA	Wan, BS,et al."Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation".NANOTECHNOLOGY 26.43(2015).