Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states

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	Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states
	Fu, HX ; Chen, L ; Chen, J ; Qiu, JL ; Ding, ZJ ; Zhang, J ; Wu, KH ; Li, H ; Meng, S
刊名	NANOSCALE
	2015
卷号	7 期号:38 页码:15880
公开日期	2016-12-26
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/60674]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Fu, HX,Chen, L,Chen, J,et al. Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states[J]. NANOSCALE,2015,7(38):15880.
APA	Fu, HX.,Chen, L.,Chen, J.,Qiu, JL.,Ding, ZJ.,...&Meng, S.(2015).Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states.NANOSCALE,7(38),15880.
MLA	Fu, HX,et al."Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states".NANOSCALE 7.38(2015):15880.