Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences

	Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences
	Huan Huang(黄欢) ; Fangyuan Zuo(左方圆) ; Fengxiao Zhai(翟凤潇) ; Yang Wang(王阳) ; Tianshu Lai(赖天树) ; Yiqun.Wu(吴谊群) ; and Fuxi Gan(干福熹)
刊名	journal of appled physics
	2009
期号	106 页码:063501-063505
合作状况	国内
学科主题	固体物理学
收录类别	SCI
语种	中文
WOS记录号	WOS:000270378100035
公开日期	2010-05-07
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/6724]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Huan Huang,Fangyuan Zuo,Fengxiao Zhai,et al. Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences[J]. journal of appled physics,2009(106):063501-063505.
APA	Huan Huang.,Fangyuan Zuo.,Fengxiao Zhai.,Yang Wang.,Tianshu Lai.,...&and Fuxi Gan.(2009).Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences.journal of appled physics(106),063501-063505.
MLA	Huan Huang,et al."Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences".journal of appled physics .106(2009):063501-063505.